3 Reasons why using SiC Diodes in your High Voltage Multiplier

SiC JBS diodes exhibit much lower leakage current as well as a better thermal behavior compared to Si Ultrafast diodes, which make them better suited for Power Applications and High Frequency Applications:

  1. Better thermal conductivity
  2. Lower ON-state resistance
  3. No Reverse Recovery Time at diode turn-off

Which leads to a more compact design.

Example of characteristics and benefits in a typical application: 1kV → 5kV, 100W, 5 stages voltage multiplier:

SiC JBS diode based solution Si Ultrafast diode based solution Benefits*
Easier Ripple Filtering Low frequency ripple on output voltage SiC based design means lower capacitors’ costs
Low ceramic capacitors cost : 0,5$/100 pieces High film caps cost : 1$/100 pieces
Low ESR/ESL capacitors, best for pulse discharge behavior Parasitic inductance in film capacitors
Full SMD: One pass soldering for components Through-hole package: Two pass soldering for components (SMD one pass, Through-hole one dedicated pass) Full SMD allows lower manufacturing time
Compact and flat 60 x 30 x 6 mm Large and bulky : 80 x 90 x 25 mm SiC based design has a more compact PCB
Transformer’s size (ETD29 Core 9.8 x 30.6 x 16 mm) reduced by 2 thanks to the higher switching frequency Bigger transformer (ETD59 Core 22.1 x 59.8 x 31.2 mm) with low switching frequency SiC designs allow a more compact transformer with costs divided by 4 from ETD59 to ETD29 core

*Parameters and benefits exposed in this table have to be correlated with applications and needs.

Example of a 3.6kV Power supply using 1.2kV SiC diode

 

 

 

 

 

 

 

 

 

Feel free to contact us for any questions you would have.
We will be glad to help you diving in Silicon Carbide Device Realm. 😃

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