SiC JBS diodes exhibit much lower leakage current as well as a better thermal behavior compared to Si Ultrafast diodes, which make them better suited for Power Applications and High Frequency Applications:
- Better thermal conductivity
- Lower ON-state resistance
- No Reverse Recovery Time at diode turn-off
Which leads to a more compact design.
Example of characteristics and benefits in a typical application: 1kV → 5kV, 100W, 5 stages voltage multiplier:
| SiC JBS diode based solution | Si Ultrafast diode based solution | Benefits* |
|---|---|---|
| Easier Ripple Filtering | Low frequency ripple on output voltage | SiC based design means lower capacitors’ costs |
| Low ceramic capacitors cost : 0,5$/100 pieces | High film caps cost : 1$/100 pieces | |
| Low ESR/ESL capacitors, best for pulse discharge behavior | Parasitic inductance in film capacitors | |
| Full SMD: One pass soldering for components | Through-hole package: Two pass soldering for components (SMD one pass, Through-hole one dedicated pass) | Full SMD allows lower manufacturing time |
| Compact and flat 60 x 30 x 6 mm | Large and bulky : 80 x 90 x 25 mm | SiC based design has a more compact PCB |
| Transformer’s size (ETD29 Core 9.8 x 30.6 x 16 mm) reduced by 2 thanks to the higher switching frequency | Bigger transformer (ETD59 Core 22.1 x 59.8 x 31.2 mm) with low switching frequency | SiC designs allow a more compact transformer with costs divided by 4 from ETD59 to ETD29 core |
*Parameters and benefits exposed in this table have to be correlated with applications and needs.
Example of a 3.6kV Power supply using 1.2kV SiC diode
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