Technical Journals
Silicon Carbide (SiC) Current Limiting Devices. The Game Changer in Electrical Protection against Energetic and Fast Transients [Download PDF] Dr Jean-Baptiste Fonder (FAE), Dr Dominique Tournier (CTO), Gonzalo Picun (BDM) and Laurent Martinez (Sales Mgr) BODO’s Power Systems, July 2020 58-61 To Protect and to Serve. A novel Silicon Carbide based hybrid surge suppressor module for safeguarding AC and DC power circuitry [Download PDF] D Tournier, P Brosselard, Ph Burnside BODO’s Power Systems, May 2016 70-71Scientific communications
Studies on Floating Contact Press-Pack Diodes Surge Current Capability V Banu, M Berthou, J Montserrat, X Jordà, J Millan, P Godignon Materials Science Forum 858, 1053-1056 Repetitive Short-Circuit tests on SiC VMOS devices M Berthou, P Bevilacqua, JB Fonder, D Tournier Materials Science Forum 858, 812-816 Design Impact on the Static and Short-Circuit Characteristics of SiC-SIT with Non-Uniformly Doped Channel SQ Niu, M Berthou, D Tournier Materials Science Forum 858, 925-928 Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range B Asllani, M Berthou, D Tournier, P Brosselard, P Godignon Materials Science Forum 858, 741-744 An Ultrafast IV Measurement Technique Accounting for Capacitive and Leakage Currents in Reverse Mode for SiC Power Devices JB Fonder, P Brosselard, D Tournier, M Berthou, B Vergne Materials Science Forum 858, 422-425 Repetitive Short-Circuit tests on SiC VMOS devices M Berthou, P Bevilacqua, JB Fonder, D Tournier Materials Science Forum 858, 812-816Current Limiting Devices
| Part Number | Package | Polarity | Temperature Range | VMax | ITyp | ISat | RON | Model | Datasheet | Eval. Board |
|---|---|---|---|---|---|---|---|---|---|---|
| KE12LS060SB | SMB | Unidir | -55°C to +175°C | 1200V | 1.6A | 10A | 0.6Ω |  |
 |
YES |
| KE12LEB150T20 | TO220-3L | Bidir | -55°C to +175°C | 1200V | 2A | 3A | 1.5Ω | |
|
YES |
| KE12LEB800S223 | SOT223-3L | Bidir | -55°C to +175°C | 1200V | 0.4A | 1.5A | 4.5Ω | Contact us | |
YES |
1.2 kV Diodes
1.7 kV Diodes
3.3 kV Diodes
Discover a collection of tools allowing customers to better implement CALY Technologies products.
Dies per wafer calculator
Die Per Wafer CalculatorThe tool “Die Per Wafer Calculator” searches the highest number of complete die per wafer. User can customize several parameters such as wafer and die size, scribe lane values and exclusion edge. In addition, an estimation of good dies is calculated, assuming a statistical law of the fabrication yield and a defect density parameter. A wafer map is automatically displayed, corresponding to the user’s set of parameters.
[Try the Die Per Wafer Calculator]
To assist you in selecting proper CALY Technologies SiC Schottky Diodes, please visit our Cross Reference page from most known SiC Diode Manufacturer.
You’ll be able to find CALY Technologies drop-in equivalent Part/Number.