Access to document and tools

Technical Journals

Silicon Carbide (SiC) Current Limiting Devices. The Game Changer in Electrical Protection against Energetic and Fast Transients [Download PDF]
Dr Jean-Baptiste Fonder (FAE), Dr Dominique Tournier (CTO), Gonzalo Picun (BDM) and Laurent Martinez (Sales Mgr)
BODO’s Power Systems, July 2020 58-61

To Protect and to Serve. A novel Silicon Carbide based hybrid surge suppressor module for safeguarding AC and DC power circuitry  [Download PDF]
D Tournier, P Brosselard, Ph Burnside
BODO’s Power Systems, May 2016 70-71


Scientific communications

Studies on Floating Contact Press-Pack Diodes Surge Current Capability
V Banu, M Berthou, J Montserrat, X Jordà, J Millan, P Godignon
Materials Science Forum 858, 1053-1056

 

Repetitive Short-Circuit tests on SiC VMOS devices
M Berthou, P Bevilacqua, JB Fonder, D Tournier
Materials Science Forum 858, 812-816

 

Design Impact on the Static and Short-Circuit Characteristics of SiC-SIT with Non-Uniformly Doped Channel
SQ Niu, M Berthou, D Tournier
Materials Science Forum 858, 925-928

 

Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range
B Asllani, M Berthou, D Tournier, P Brosselard, P Godignon
Materials Science Forum 858, 741-744

 

An Ultrafast IV Measurement Technique Accounting for Capacitive and Leakage Currents in Reverse Mode for SiC Power Devices
JB Fonder, P Brosselard, D Tournier, M Berthou, B Vergne
Materials Science Forum 858, 422-425

 

Repetitive Short-Circuit tests on SiC VMOS devices
M Berthou, P Bevilacqua, JB Fonder, D Tournier
Materials Science Forum 858, 812-816

 




Current Limiting Devices

Part Number Package Polarity Temperature Range VMax ITyp ISat RON Model Datasheet Eval. Board
KE12LS060SB SMB Unidir -55°C to +175°C 1200V 1.6A 10A 0.6Ω YES
KE12LEB150T20 TO220-3L Bidir -55°C to +175°C 1200V 2A 3A 1.5Ω YES
KE12LEB800S223 SOT223-3L Bidir -55°C to +175°C 1200V 0.4A 1.5A 4.5Ω Contact us YES

Diodes

Part Number Device Type Package Temperature Range VR IF(A) QC VF(V) Model Datasheet
KE12DJ02B JBS (MPS) Bare Die / Wafer -55°C to +175°C 1200V 2 20nC 1.35V Contact us
KE12DJ02T52 JBS (MPS) TO252-2L (DPAK) -55°C to +175°C 1200V 2 20nC 1.35V Contact us
KE12DJ05T20 JBS (MPS) TO220-2L -55°C to +175°C 1200V 5 38nC 1.45V Contact us
KE12DJ10T20 JBS (MPS) TO220-2L -55°C to +175°C 1200V 10 102nC 1.45V Contact us
New KE12DJ10DT47 JBS (MPS) TO247-3L -55°C to +175°C 1200V 10 38/76nC 1.45V Contact us
KT12DS10B SBD Bare Die / Wafer -55°C to +232°C 1200V 10 35nC 1.7V Contact us
KT12DS10T57 SBD TO257-3L -55°C to +232°C 1200V 10 35nC 1.7V Contact us
KE12DJ20B JBS (MPS) Bare Die / Wafer -55°C to +175°C 1200V 20 107nC 1.55V Contact us
New KE12DJ20DT47 JBS (MPS) TO247-3L -55°C to +175°C 1200V 20 81/162nC 1.45V Contact us
KE12DJ50B JBS (MPS) Bare Die / Wafer -55°C to +175°C 1200V 50 336nC 1.6V Contact us
Part Number Device Type Package Temperature Range VR IF QC VF Model Datasheet
KE17DJ10B JBS (MPS) Bare Die / Wafer -55°C to +175°C 1700V 10A 75nC 1.4V Contact us
New KE17DJ25B JBS (MPS) Bare Die / Wafer -55°C to +175°C 1700V 25A 155nC 1.6V Contact us
New KE17DJ25T47 JBS (MPS) TO247-2L -55°C to +175°C 1700V 25A 155nC 1.6V Contact us
Part Number Device Type Package Temperature Range VR IF QC VF Model Datasheet
KE33DJ02B JBS (MPS) Bare Die / Wafer -55°C to +175°C 3300V 2A 36nC 1.75V Contact us
KE33DJ02T47 JBS (MPS) TO247-2L -55°C to +175°C 3300V 2A 36nC 1.75V Contact us
KE33DJ03B JBS (MPS) Bare Die / Wafer -55°C to +175°C 3300V 3A 60nC 1.65V Contact us
KE33DJ03T47 JBS (MPS) TO247-2L -55°C to +175°C 3300V 3A 60nC 1.65V Contact us
Upon Request KE33DJ20B JBS (MPS) Bare Die / Wafer / TO247-2L -55°C to +175°C 3300V 20A 1.75V Contact us

JFET

Part Number Package Temperature Range VR RDS(ON) IDMax Model Datasheet Demo Board
KT12FN008B Bare Die -55°C to +232°C 1200V 80mΩ 15A Contact us NO
KT12FN008T TO257-3L -55°C to +232°C 1200V 80mΩ 15A Contact us NO

Discover a collection of tools allowing customers to better implement CALY Technologies products.


Dies per wafer calculator

Die Per Wafer Calculator

Die Per Wafer CalculatorThe tool “Die Per Wafer Calculator” searches the highest number of complete die per wafer. User can customize several parameters such as wafer and die size, scribe lane values and exclusion edge.  In addition, an estimation of good dies is calculated, assuming a statistical law of the fabrication yield and a defect density parameter. A wafer map is automatically displayed, corresponding to the user’s set of parameters.

[Try the Die Per Wafer Calculator]

 


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