Documents & Tools

Technical Journals

2016

To Protect and to Serve. A novel Silicon Carbide based hybrid surge suppressor module for safeguarding AC and DC power circuitry  [Download PDF]
D Tournier, P Brosselard, Ph Burnside
BODO’s Power Systems, May 2016 70-71



Scientific communications

2016

Studies on Floating Contact Press-Pack Diodes Surge Current Capability
V Banu, M Berthou, J Montserrat, X Jordà, J Millan, P Godignon
Materials Science Forum 858, 1053-1056

 

Repetitive Short-Circuit tests on SiC VMOS devices
M Berthou, P Bevilacqua, JB Fonder, D Tournier
Materials Science Forum 858, 812-816

 

Design Impact on the Static and Short-Circuit Characteristics of SiC-SIT with Non-Uniformly Doped Channel
SQ Niu, M Berthou, D Tournier
Materials Science Forum 858, 925-928

 

Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range
B Asllani, M Berthou, D Tournier, P Brosselard, P Godignon
Materials Science Forum 858, 741-744

 

An Ultrafast IV Measurement Technique Accounting for Capacitive and Leakage Currents in Reverse Mode for SiC Power Devices
JB Fonder, P Brosselard, D Tournier, M Berthou, B Vergne
Materials Science Forum 858, 422-425

 

Repetitive Short-Circuit tests on SiC VMOS devices
M Berthou, P Bevilacqua, JB Fonder, D Tournier
Materials Science Forum 858, 812-816

 




Current Limiting Devices

Part Number Package Polarity Temperature Range VMax Inom ISat RON Model Datasheet Demo Board
KE12LS200B Bare Die Unidirectional -55°C to +175°C 1200V 0.5A 4A Contact us PDF YES
KE12LS200T47 TO247-2L Unidirectional -55°C to +175°C 1200V 0.5A 4A LT-SPICE PDF YES
KE12LSB200B Bare Die Bidirectional -55°C to +175°C 1200V 0.5A 4A Contact us PDF YES
KE12LSB200T47 TO247-3L Bidirectional -55°C to +175°C 1200V 0.5A 4A LT-SPICE PDF YES
KE12LS060B Bare Die Unidirectional -55°C to +175°C 1200V 1.6A 10A 0.6Ω Contact us PDF YES
KE12LS060T47 TO247-2L Unidirectional -55°C to +175°C 1200V 1.6A 10A 0.6Ω LT-SPICE PDF YES
KE12LS060SB SMB Unidirectional -55°C to +175°C 1200V 1.6A 10A 0.6Ω LT-SPICE PDF YES

Diodes

Part Number Device Type Package Temperature Range VR IF C VF Model Datasheet Demo Board
KE12DJ02B JBS (MPS) Bare Die -55°C to +175°C 1200V 2A 20pF 1.35V SPICE Contact us NO
KE12DJ02T52 JBS (MPS) TO252 (DPAK) -55°C to +175°C 1200V 2A 20pF 1.35V SPICE PDF NO
KT12DS10B JBS (MPS) Bare Die -55°C to +232°C 1200V 15A 505pF 1.7V SPICE PDF NO
KT12DS10T57 JBS (MPS) TO257-3L -55°C to +232°C 1200V 15A 505pF 1.7V SPICE PDF NO
KE12DJ20B JBS (MPS) Bare Die -55°C to +175°C 1200V 20A 102pF 1.55V SPICE PDF NO
KE12DJ50B JBS (MPS) Bare Die -55°C to +175°C 1200V 50A 265pF 1.6V SPICE PDF NO
KE17DJ10B JBS (MPS) Bare Die -55°C to +175°C 1700V 10A 66pF 1.4V SPICE PDF NO
KE40DS02B SBD Bare Die -55°C to +175°C 4000V 2A 270pF 3V SPICE PDF NO
KE40DS02T47 SBD TO247-2L -55°C to +175°C 4000V 2A 270pF 3V SPICE PDF NO

JFET

Part Number Package Temperature Range VR RDS(ON) IDMax Model Datasheet Demo Board
KT12FN008B Bare Die -55°C to +232°C 1200V 80mΩ 15A SPICE PDF NO
KT12FN008T TO257-3L -55°C to +232°C 1200V 80mΩ 15A SPICE PDF NO

Discover a collection of tools allowing customers to better implement CALY Technologies products.


Die per wafer calculator.

Die Per Wafer Calculator
Die Per Wafer Calculator

The tool “Die Per Wafer Calculator” searches the highest number of complete die per wafer. User can customize several parameters such as wafer and die size, scribe lane values and exclusion edge.  In addition, an estimation of good dies is calculated, assuming a statistical law of the fabrication yield and a defect density parameter. A wafer map is automatically displayed, corresponding to the user’s set of parameters.

[Try the Die Per Wafer Calculator]